Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond

نویسنده

  • L. Schafer
چکیده

The quantitative determination of atomic hydrogen concentrations cn in the vicinity of hot filaments is performed with two-photon laser-induced fluorescence. The measurements yield atomic hydrogen concentration profiles up to 28 mm from the filament surface with a spatial resolution of about 0.5 mm. The nonequilibrium nature of the hydrogen dissociation on the filament surface results in a saturation of hydrogen concentration profiles cH(r) for gas pressures above 10 mbar. Atomic concentrations in immediate vicinity of the filament are significantly lower than expected from thermodynamical calculations and depend on the filament diameter. Addition of methane results in a decrease of cn by more than 30% near the filament and a steeper en(r) dependence, demonstrating the accelerated consumption of H atoms by the presence of hydrocarbon species. H concentration profiles for Ta, Ir, and W filaments show a dependence on filament materials which might be taken into account when selecting filament materials for chemical vapor deposition of diamond.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Scaling laws for diamond chemical-vapor deposition. IL Atomic hydrogen trans

Scaling relations are developed to allow estimation of the atomic hydrogen concentration at the substrate during diamond chemical-vapor deposition for both diffusion-dominated and convection-dominated reactors. In the convection-dominated case, it is shown that there exists an optimal Mach number which maximizes the H concentration delivered to the substrate. In addition, when homogeneous recom...

متن کامل

Modeling of the role of atomic hydrogen in heat transfer during hot filament assisted deposition of diamond

The temperature and atomic hydrogen concentration profiles in a hot filament type diamond deposition reactor were determined experimentally and theoretically to demonstrate that the reaction of atomic hydrogen on the substrate surface plays an important role in the heating of the substrate. For a given filament temperature, the substrate temperature in helium was significantly lower than that i...

متن کامل

Two-photon excited LIF determination of H-atom concentrations near a heated filament in a low pressure H(2)environment.

With respect to the investigation of low pressure filament-assisted chemical vapor deposition processes for diamond formation, absolute concentrations of atomic hydrogen were determined by two-photon laserinduced fluorescence in the vicinity of a heated filament in an environment containing H(2) or mixtures of H(2)and CH(4). Radial H concentration profiles were obtained for different pressures ...

متن کامل

Scaling laws for diamond chemical-vapor deposition. I. Diamond surface chemistry

A simplified model of the gas-surface chemistry occurring during chemical-vapor deposition of diamond thin films is presented. The model results in simple scaling relations, useful for process scale-up and optimization, for growth rate and defect density in terms of the local chemical environment at the substrate. A simple two-parameter expression for growth rate is obtained, which with suitabl...

متن کامل

Dielectric properties of hydrogen-incorporated chemical vapor deposited diamond thin films

Diamond thin films with a broad range of microstructures from a ultrananocrystalline diamond (UNCD) form developed at Argonne National Laboratory to a microcrystalline diamond (MCD) form have been grown with different hydrogen percentages in the Ar/CH4 gas mixture used in the microwave plasma enhanced chemical vapor deposition (CVD) process. The dielectric properties of the CVD diamond thin fil...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1999